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Nonlinear optical phenomena
Nonlinear structures in a wide-aperture semiconductor interferometer when stimulated recombination is important
Yu. I. Balkareĭ, M. G. Evtikhov, A. S. Kogan Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow
Abstract:
Concentration — field structures made up of periodically arranged or solitary layers in a thin nonlinear wide-aperture semiconductor interferometer were examined in the range of pumping rates in which stimulated recombination of electrons and holes plays a significant role. It is shown that, after attainment of the threshold concentration in the layers, the latter become microlasers for the transverse wave modes of the interferometer.
Received: 09.12.1998
Citation:
Yu. I. Balkareĭ, M. G. Evtikhov, A. S. Kogan, “Nonlinear structures in a wide-aperture semiconductor interferometer when stimulated recombination is important”, Kvantovaya Elektronika, 27:1 (1999), 65–68 [Quantum Electron., 29:4 (1999), 347–350]
Linking options:
https://www.mathnet.ru/eng/qe1485 https://www.mathnet.ru/eng/qe/v27/i1/p65
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