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Kvantovaya Elektronika, 1999, Volume 27, Number 1, Pages 65–68 (Mi qe1485)  

Nonlinear optical phenomena

Nonlinear structures in a wide-aperture semiconductor interferometer when stimulated recombination is important

Yu. I. Balkareĭ, M. G. Evtikhov, A. S. Kogan

Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow
Abstract: Concentration — field structures made up of periodically arranged or solitary layers in a thin nonlinear wide-aperture semiconductor interferometer were examined in the range of pumping rates in which stimulated recombination of electrons and holes plays a significant role. It is shown that, after attainment of the threshold concentration in the layers, the latter become microlasers for the transverse wave modes of the interferometer.
Received: 09.12.1998
English version:
Quantum Electronics, 1999, Volume 29, Issue 4, Pages 347–350
DOI: https://doi.org/10.1070/QE1999v029n04ABEH001485
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.65.Pc, 42.65.Sf, 07.60.Ly
Language: Russian


Citation: Yu. I. Balkareĭ, M. G. Evtikhov, A. S. Kogan, “Nonlinear structures in a wide-aperture semiconductor interferometer when stimulated recombination is important”, Kvantovaya Elektronika, 27:1 (1999), 65–68 [Quantum Electron., 29:4 (1999), 347–350]
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