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Kvantovaya Elektronika, 1999, Volume 27, Number 1, Pages 65–68 (Mi qe1485)  

Nonlinear optical phenomena

Nonlinear structures in a wide-aperture semiconductor interferometer when stimulated recombination is important

Yu. I. Balkareĭ, M. G. Evtikhov, A. S. Kogan

Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
Abstract: Concentration — field structures made up of periodically arranged or solitary layers in a thin nonlinear wide-aperture semiconductor interferometer were examined in the range of pumping rates in which stimulated recombination of electrons and holes plays a significant role. It is shown that, after attainment of the threshold concentration in the layers, the latter become microlasers for the transverse wave modes of the interferometer.
Received: 09.12.1998
English version:
Quantum Electronics, 1999, Volume 29, Issue 4, Pages 347–350
DOI: https://doi.org/10.1070/QE1999v029n04ABEH001485
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.65.Pc, 42.65.Sf, 07.60.Ly
Language: Russian


Citation: Yu. I. Balkareĭ, M. G. Evtikhov, A. S. Kogan, “Nonlinear structures in a wide-aperture semiconductor interferometer when stimulated recombination is important”, Kvantovaya Elektronika, 27:1 (1999), 65–68 [Quantum Electron., 29:4 (1999), 347–350]
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    Квантовая электроника Quantum Electronics
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