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Nonlinear optical phenomena
Nonlinear structures in a wide-aperture semiconductor interferometer when stimulated recombination is important
Yu. I. Balkareĭ, M. G. Evtikhov, A. S. Kogan Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
Abstract:
Concentration — field structures made up of periodically arranged or solitary layers in a thin nonlinear wide-aperture semiconductor interferometer were examined in the range of pumping rates in which stimulated recombination of electrons and holes plays a significant role. It is shown that, after attainment of the threshold concentration in the layers, the latter become microlasers for the transverse wave modes of the interferometer.
Received: 09.12.1998
Citation:
Yu. I. Balkareĭ, M. G. Evtikhov, A. S. Kogan, “Nonlinear structures in a wide-aperture semiconductor interferometer when stimulated recombination is important”, Kvantovaya Elektronika, 27:1 (1999), 65–68 [Quantum Electron., 29:4 (1999), 347–350]
Linking options:
https://www.mathnet.ru/eng/qe1485 https://www.mathnet.ru/eng/qe/v27/i1/p65
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Abstract page: | 121 | Full-text PDF : | 71 | First page: | 1 |
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