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Kvantovaya Elektronika, 2012, Volume 42, Number 7, Pages 583–587 (Mi qe14842)  

This article is cited in 8 scientific papers (total in 8 papers)

Lasers

Electron beam pumped Zn(Cd)Se/ZnMgSSe quantum well semiconductor disk laser

V. I. Kozlovskya, P. I. Kuznetsovb, D. E. Sviridova, G. G. Yakushchevab

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Full-text PDF (840 kB) Citations (8)
References:
Abstract: We report pulsed 465-nm lasing in a longitudinally electron beam pumped Zn(Cd)Se/ZnMgSSe heterostructure with 30 quantum wells, grown by metalorganic vapour phase epitaxy. At an external spherical mirror radius of 30 mm, 3 % transmission of the mirror, and an electron energy of 42 keV, the peak laser output power reached 1.4 W. The pulse duration was 20 — 40 ns, the emission linewidth was within 0.3 nm, and the beam divergence was about 4 — 5 mrad, approaching the diffraction limit.
Keywords: semiconductor disk laser, electron beam pumping, ZnCdSe/ZnMgSSe heterostructure, quantum well, metalorganic vapour phase epitaxy.
Received: 02.03.2012
Revised: 10.04.2012
English version:
Quantum Electronics, 2012, Volume 42, Issue 7, Pages 583–587
DOI: https://doi.org/10.1070/QE2012v042n07ABEH014842
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 41.75.Fr, 42.60.Da, 42.60.Jf, 78.67.De
Language: Russian


Citation: V. I. Kozlovsky, P. I. Kuznetsov, D. E. Sviridov, G. G. Yakushcheva, “Electron beam pumped Zn(Cd)Se/ZnMgSSe quantum well semiconductor disk laser”, Kvantovaya Elektronika, 42:7 (2012), 583–587 [Quantum Electron., 42:7 (2012), 583–587]
Linking options:
  • https://www.mathnet.ru/eng/qe14842
  • https://www.mathnet.ru/eng/qe/v42/i7/p583
  • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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