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Kvantovaya Elektronika, 2012, Volume 42, Number 3, Pages 189–191 (Mi qe14834)  

This article is cited in 16 scientific papers (total in 16 papers)

Letters

IR luminescence of tellurium-doped silica-based optical fibre

E. M. Dianova, S. V. Alysheva, A. V. Shubina, V. F. Khopinb, A. N. Gur'yanovb

a Fiber Optics Research Center of the Russian Academy of Sciences, Moscow
b Institute of Chemistry of High-Purity Substances RAS, Nizhnii Novgorod
References:
Abstract: Tellurium-doped germanosilicate fibre has been fabricated by the MCVD process. In contrast to Te-containing glasses studied earlier, it has a broad luminescence band (full width at half maximum of ~350 nm) centred at 1500 nm, with a lifetime of ~2 μs. The luminescence of the fibre has been studied before and after gamma irradiation in a 60Co source to 309 and 992 kGy. The irradiation produced a luminescence band around 1100 nm, with a full width at half maximum of ~400 nm and lifetime of ~5 μs.
Keywords: tellurium, tellurium-doped optical fibre.
Received: 27.02.2012
English version:
Quantum Electronics, 2012, Volume 42, Issue 3, Pages 189–191
DOI: https://doi.org/10.1070/QE2012v042n03ABEH014834
Bibliographic databases:
Document Type: Article
PACS: 42.81.Bm, 42.81.Cn, 78.60.Lc
Language: Russian


Citation: E. M. Dianov, S. V. Alyshev, A. V. Shubin, V. F. Khopin, A. N. Gur'yanov, “IR luminescence of tellurium-doped silica-based optical fibre”, Kvantovaya Elektronika, 42:3 (2012), 189–191 [Quantum Electron., 42:3 (2012), 189–191]
Linking options:
  • https://www.mathnet.ru/eng/qe14834
  • https://www.mathnet.ru/eng/qe/v42/i3/p189
  • This publication is cited in the following 16 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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