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Kvantovaya Elektronika, 2012, Volume 42, Number 3, Pages 208–210 (Mi qe14798)  

This article is cited in 2 scientific papers (total in 2 papers)

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Effect of structural imperfections on lasing characteristics of diode-pumped YVO4, GdVO4 and mixed rare-earth vanadate crystals

G. Yu. Orlovaa, V. I. Vlasovb, Yu. D. Zavartsevb, A. I. Zagumennyib, I. I. Kalashnikovaa, S. A. Kutovoib, V. S. Naumova, A. A. Sirotkinb

a Polyus Research and Development Institute named after M. F. Stel'makh
b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
Full-text PDF (347 kB) Citations (2)
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Abstract: The efficiency of diode-pumped lasers with gain elements made from yttrium, gadolinium, yttrium — gadolinium and yttrium — scandium orthovanadate crystals has been shown for the first time to be influenced by structural imperfections (quality) of the crystals. This allows one to predict lasing parameters of such crystals in a preliminary step, without fabricating gain elements.
Keywords: yttrium vanadate, gadolinium vanadate, mixed rare-earth vanadates, structural imperfections, lasing parameters.
Received: 22.11.2011
Revised: 13.02.2012
English version:
Quantum Electronics, 2012, Volume 42, Issue 3, Pages 208–210
DOI: https://doi.org/10.1070/QE2012v042n03ABEH014798
Bibliographic databases:
Document Type: Article
PACS: 42.55.Rz, 42.55.Xi, 42.70.Hj, 61.05.Cp
Language: Russian


Citation: G. Yu. Orlova, V. I. Vlasov, Yu. D. Zavartsev, A. I. Zagumennyi, I. I. Kalashnikova, S. A. Kutovoi, V. S. Naumov, A. A. Sirotkin, “Effect of structural imperfections on lasing characteristics of diode-pumped YVO4, GdVO4 and mixed rare-earth vanadate crystals”, Kvantovaya Elektronika, 42:3 (2012), 208–210 [Quantum Electron., 42:3 (2012), 208–210]
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  • https://www.mathnet.ru/eng/qe14798
  • https://www.mathnet.ru/eng/qe/v42/i3/p208
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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    Abstract page:259
    Full-text PDF :126
    References:35
    First page:2
     
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