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This article is cited in 4 scientific papers (total in 4 papers)
Nonlinear optical phenomena
Resonance enhancement of nonlinear photoluminescence in gallium selenide and related compounds
Ch. Angermannab, P. Karichab, L. Kadorab, K. R. Allakhverdievcd, T. Baykarac, È. Yu. Salaeve a Bayreuther Institut für Makromolekülforschung, Germany
b University of Bayreuth, Institute of Physics, Germany
c Marmara Research Centre of TÜBİTAK, Materials Institute, Turkey
d Azerbaijan National Academy of Aviation
e Azerbaijan National Academy of Sciences, Institute of Physics
Abstract:
Maker fringe experiments on the layered chalcogenide semiconductor gallium selenide (GaSe) with weak cw diode lasers are presented. It is demonstrated that nonlinear photoluminescence emitted by this material and by the similar compound GaSe0.9S0.1 under illumination with a 632.8-nm He — Ne laser shows very strong resonance enhancement upon heating when the absorption edge and exciton levels are shifted towards the laser line. The photoluminescence appears to be strongest when the energy level of the direct exciton, which emits it, is resonant with the photon energy of the laser. The previously observed enhancement of the photoluminescence by electric fields is interpreted in this context.
Keywords:
gallium selenide, photoluminescence, nonlinear optics, Maker fringes, excitons.
Received: 22.09.2011 Revised: 01.02.2012
Citation:
Ch. Angermann, P. Karich, L. Kador, K. R. Allakhverdiev, T. Baykara, È. Yu. Salaev, “Resonance enhancement of nonlinear photoluminescence in gallium selenide and related compounds”, Kvantovaya Elektronika, 42:5 (2012), 457–461 [Quantum Electron., 42:5 (2012), 457–461]
Linking options:
https://www.mathnet.ru/eng/qe14729 https://www.mathnet.ru/eng/qe/v42/i5/p457
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