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This article is cited in 7 scientific papers (total in 7 papers)
Lasers
Broadband superluminescent diodes and semiconductor optical amplifiers for the spectral range 750 — 800 nm
S. N. Il'chenko, Yu. O. Kostin, I. A. Kukushkin, M. A. Ladugin, P. I. Lapin, A. A. Lobintsov, A. A. Marmalyuk, S. D. Yakubovich Superlum Diodes Ltd., Moscow
Abstract:
We have studied superluminescent diodes (SLDs) and semiconductor optical amplifiers (SOAs) based on an (AlxGa1-x)As/GaAs single quantum well structure with an Al content x ~0.1 in a 10-nm-thick active layer. Depending on the length of the active channel, the single-mode fibre coupled cw output power of the SLDs is 1 to 30 mW at a spectral width of about 50 nm. The width of the optical gain band in the active channel exceeds 40 nm. Preliminary operating life tests have demonstrated that the devices are sufficiently reliable.
Received: 06.05.2011
Citation:
S. N. Il'chenko, Yu. O. Kostin, I. A. Kukushkin, M. A. Ladugin, P. I. Lapin, A. A. Lobintsov, A. A. Marmalyuk, S. D. Yakubovich, “Broadband superluminescent diodes and semiconductor optical amplifiers for the spectral range 750 — 800 nm”, Kvantovaya Elektronika, 41:8 (2011), 677–680 [Quantum Electron., 41:8 (2011), 677–680]
Linking options:
https://www.mathnet.ru/eng/qe14652 https://www.mathnet.ru/eng/qe/v41/i8/p677
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Abstract page: | 256 | Full-text PDF : | 116 | References: | 31 | First page: | 1 |
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