Yu. D. Zavartsev, A. I. Zagumennyi, Yu. L. Kalachev, S. A. Kutovoi, V. A. Mikhaĭlov, V. V. Podreshetnikov, I. A. Shcherbakov, “Diode-pumped Tm:Sc2SiO5 laser (λ = 1.98 μm)”, Kvantovaya Elektronika, 41:5 (2011), 420–422 [Quantum Electron., 41:5 (2011), 420

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Kvantovaya Elektronika, 2011, Volume 41, Number 5, Pages 420–422 (Mi qe14483)

This article is cited in 11 scientific papers (total in 11 papers)

Lasers

Diode-pumped Tm:Sc₂SiO₅ laser (λ = 1.98 μm)

Yu. D. Zavartsev, A. I. Zagumennyi, Yu. L. Kalachev, S. A. Kutovoi, V. A. Mikhaĭlov, V. V. Podreshetnikov, I. A. Shcherbakov

Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow

Full-text PDF (270 kB) Citations (11)

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Abstract: Lasing at a wavelength of 1.98 μm is obtained for the first time in a diode-pumped (λ = 792 μm) active element made of a Tm³⁺:Sc₂SiO₅ crystal grown by the Czochralski method. The laser slope efficiency reached 18.7% at the output power up to 520 mW.

Received: 01.11.2010
Revised: 09.02.2011

English version:
Quantum Electronics, 2011, Volume 41, Issue 5, Pages 420–422
DOI: https://doi.org/10.1070/QE2011v041n05ABEH014483

Bibliographic databases:

Document Type: Article

PACS: 42.55.Rz, 42.70.Hj, 42.60.Lh

Language: Russian

Citation: Yu. D. Zavartsev, A. I. Zagumennyi, Yu. L. Kalachev, S. A. Kutovoi, V. A. Mikhaĭlov, V. V. Podreshetnikov, I. A. Shcherbakov, “Diode-pumped Tm:Sc₂SiO₅ laser (λ = 1.98 μm)”, Kvantovaya Elektronika, 41:5 (2011), 420–422 [Quantum Electron., 41:5 (2011), 420–422]

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https://www.mathnet.ru/eng/qe14483

https://www.mathnet.ru/eng/qe/v41/i5/p420

This publication is cited in the following 11 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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Abstract page:	298
Full-text PDF :	95
References:	54
First page:	1

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