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Kvantovaya Elektronika, 1994, Volume 21, Number 7, Pages 633–639 (Mi qe144)  

This article is cited in 32 scientific papers (total in 32 papers)

Lasers and masers

Waveguiding properties of heterolasers based on InGaAs/GaAs strained quantum-well structures and characteristics of their gain spectra

E. V. Arzhanov, A. P. Bogatov, V. P. Konyaev, O. M. Nikitina, V. I. Shveikin

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Abstract: An experimental investigation revealed anomalies of the watt–ampere characteristics and modulation of the gain spectra, as well as certain features of the far-field pattern of the radiation emitted by heterolasers based on InGaAs/GaAs strained quantum-well structures. A theoretical analysis showed that the radiative characteristics of such lasers are governed by their waveguiding properties and that these properties depend on the thickness and composition of the emitter layers, and are the results of 'leakage' of the radiation field out of the waveguide.
Received: 22.11.1993
English version:
Quantum Electronics, 1994, Volume 24, Issue 7, Pages 581–587
DOI: https://doi.org/10.1070/QE1994v024n07ABEH000144
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Jf, 42.79.Gn
Language: Russian


Citation: E. V. Arzhanov, A. P. Bogatov, V. P. Konyaev, O. M. Nikitina, V. I. Shveikin, “Waveguiding properties of heterolasers based on InGaAs/GaAs strained quantum-well structures and characteristics of their gain spectra”, Kvantovaya Elektronika, 21:7 (1994), 633–639 [Quantum Electron., 24:7 (1994), 581–587]
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  • https://www.mathnet.ru/eng/qe/v21/i7/p633
  • This publication is cited in the following 32 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Квантовая электроника Quantum Electronics
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