Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 2010, Volume 40, Number 7, Pages 599–603 (Mi qe14335)  

This article is cited in 3 scientific papers (total in 3 papers)

Lasers

Electron beam generation in open hollow-cathode discharge and the characteristics of He—Xe laser on the Xe line at λ = 2.026 μm

E. V. Bel'skaya, P. A. Bokhan, D. È. Zakrevskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (683 kB) Citations (3)
References:
Abstract: An open hollow-cathode discharge, generating an electron beam, is implemented in a cell with an active volume of 6.2 L. An electron-beam current of 3.4 A at an average power of 2.5 kW is obtained in helium in the quasi-cw regime at an anode voltage of 1.5 kV. Lasing in a He—Xe mixture on the 5d[3/2]01—6p[3/2]1 transition in xenon at the wavelength λ = 2.026 μm under electron-beam excitation is investigated. The optimal component ratio in the He : Xe mixture is 99.5 : 0.5 (pHe = 4—8 Torr). The lasing power linearly increases with increasing the electron-beam power. It is shown that the discharge of this type can be used as an electron-beam source for exciting gaseous active media.
Received: 02.04.2010
Revised: 24.05.2010
English version:
Quantum Electronics, 2010, Volume 40, Issue 7, Pages 599–603
DOI: https://doi.org/10.1070/QE2010v040n07ABEH014335
Bibliographic databases:
Document Type: Article
PACS: 41.75.Fr, 52.80.-s, 42.55.Lt, 42.60.Lh
Language: Russian


Citation: E. V. Bel'skaya, P. A. Bokhan, D. È. Zakrevskii, “Electron beam generation in open hollow-cathode discharge and the characteristics of He—Xe laser on the Xe line at λ = 2.026 μm”, Kvantovaya Elektronika, 40:7 (2010), 599–603 [Quantum Electron., 40:7 (2010), 599–603]
Linking options:
  • https://www.mathnet.ru/eng/qe14335
  • https://www.mathnet.ru/eng/qe/v40/i7/p599
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024