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Kvantovaya Elektronika, 2010, Volume 40, Number 2, Pages 98–100 (Mi qe14258)  

This article is cited in 31 scientific papers (total in 31 papers)

Lasers

Efficient lasing at 2.1 μm in a Ho:YAG laserpumped by a Tm:YLF laser

N. G. Zakharovab, O. L. Antipovb, V. V. Sharkova, A. P. Savikina

a National Research Lobachevsky State University of Nizhny Novgorod
b Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
Full-text PDF (98 kB) Citations (31)
References:
Abstract: A laser based on a Ho:YAG crystal operating at a wavelength of ~2.1 μm under pumping by Tm:YLF laser radiation with a wavelength of 1.908 μm is studied. The laser operates in cw and repetitively pulsed regimes with a high beam quality (quality factor M2≤1.2). The cw radiation power reached 15 W with the total optical efficiency of ~55 %. In the active Q-switched regime (achieved using an acousto-optic Q-switch), a highly stable repetitively pulsed lasing was obtained with a pulse repetition rate of 2.5—10 kHz, a pulse duration of 25—55 ns, and an average power up to 14.7 W. Using intracavity frequency selection, lasing was obtained at individual spectral lines in three wavelength regions, near 2.09, 2.097, and 2.123 μm.
Received: 01.12.2009
English version:
Quantum Electronics, 2010, Volume 40, Issue 2, Pages 98–100
DOI: https://doi.org/10.1070/QE2010v040n02ABEH014258
Bibliographic databases:
Document Type: Article
PACS: 42.55.Rz, 42.60.Gd, 42.60.Jf
Language: Russian


Citation: N. G. Zakharov, O. L. Antipov, V. V. Sharkov, A. P. Savikin, “Efficient lasing at 2.1 μm in a Ho:YAG laserpumped by a Tm:YLF laser”, Kvantovaya Elektronika, 40:2 (2010), 98–100 [Quantum Electron., 40:2 (2010), 98–100]
Linking options:
  • https://www.mathnet.ru/eng/qe14258
  • https://www.mathnet.ru/eng/qe/v40/i2/p98
  • This publication is cited in the following 31 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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    Abstract page:650
    Full-text PDF :245
    References:71
    First page:1
     
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