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Kvantovaya Elektronika, 2010, Volume 40, Number 1, Pages 28–34 (Mi qe14165)  

This article is cited in 8 scientific papers (total in 8 papers)

Lasers

Kinetics of processes and energy distribution in an electric discharge upon pumping a XeCl laser

Yu. I. Bychkov, S. A. Yampol'skaya, A. G. Yastremskii

Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences, Tomsk
Full-text PDF (175 kB) Citations (8)
References:
Abstract: Radiation energies and efficiencies of the XeCl laser are calculated for different pump regimes in a broad range of variations in the initial parameters [pump energy of 50 — 350 J L-1, pulse duration of 30 — 150 ns, initial concentration of HCl molecules of (0.7 — 2.5) × 1017 cm-3]. The sequence of kinetic processes during which the pump energy is converted into induced radiation and heat is determined. It is shown that when 80% — 90% of the initial HCl concentration is used per pulse, the optimal ratio between the radiation energy and the laser efficiency is provided. In these regimes, about 50% of the pump energy is spent on production of excimer molecules in the entire range of the experimental parameters and for one HCl molecule 10 ± 1.5 eV is spent.
Received: 09.06.2009
English version:
Quantum Electronics, 2010, Volume 40, Issue 1, Pages 28–34
DOI: https://doi.org/10.1070/QE2010v040n01ABEH014165
Bibliographic databases:
Document Type: Article
PACS: 42.55.Lt, 42.60.Lh, 52.80.-s
Language: Russian


Citation: Yu. I. Bychkov, S. A. Yampol'skaya, A. G. Yastremskii, “Kinetics of processes and energy distribution in an electric discharge upon pumping a XeCl laser”, Kvantovaya Elektronika, 40:1 (2010), 28–34 [Quantum Electron., 40:1 (2010), 28–34]
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  • https://www.mathnet.ru/eng/qe14165
  • https://www.mathnet.ru/eng/qe/v40/i1/p28
  • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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    Abstract page:272
    Full-text PDF :115
    References:65
    First page:1
     
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