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This article is cited in 6 scientific papers (total in 6 papers)
Lasers
Simulation of a longitudinally electron-beam-pumped nanoheterostructure semiconductor laser
D. V. Vysotskiia, N. N. Ëlkina, A. P. Napartovicha, V. I. Kozlovskyb, B. M. Lavrushinb a State Research Center of Russian Federation "Troitsk Institute for Innovation and Fusion Research"
b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Abstract:
A three-dimensional numerical model of a vertical-cavity surface-emitting laser (VCSEL) containing a resonance grating of quantum wells (QWs) is developed. The Helmholtz equation for a field and the diffusion equation for a medium, in which an electron beam is the source of charge carriers, aresolved self-consistently, which allowed us to find the longitudinal and radial profiles of the generated field, its frequency, and the threshold pump current. The characteristics of the higher-order modes are calculated against the background of the frozen medium formed by the generated mode. The stability limit of the single-mode regime and the type of a mode at which lasing begins to develop with increasing pump power are found from calculations of the gain balance and losses for higher-order modes. An iteration algorithm is developed for calculating the parameters of a VCSEL with many QWs, the calculation time increasing linearly with the number of QWs. The profiles of the resonator modes and their frequency spectrum are calculated for a cylindrically symmetric VCSEL. The stability limits of single-mode lasing are determined. The results are compared qualitatively with experiments.
Received: 19.05.2009 Revised: 08.07.2009
Citation:
D. V. Vysotskii, N. N. Ëlkin, A. P. Napartovich, V. I. Kozlovsky, B. M. Lavrushin, “Simulation of a longitudinally electron-beam-pumped nanoheterostructure semiconductor laser”, Kvantovaya Elektronika, 39:11 (2009), 1028–1032 [Quantum Electron., 39:11 (2009), 1028–1032]
Linking options:
https://www.mathnet.ru/eng/qe14159 https://www.mathnet.ru/eng/qe/v39/i11/p1028
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