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Kvantovaya Elektronika, 2009, Volume 39, Number 11, Pages 1018–1022 (Mi qe14151)  

This article is cited in 12 scientific papers (total in 12 papers)

Lasers

Diode-pumped passively ]Q-switched high-repetition-rate Yb microchip laser

V. È. Kisel', A. S. Yasukevich, N. V. Kondratyuk, N. V. Kuleshov

Research Institute of Optical Materials and Technologies, Belarus National Technical University
Abstract: The system of balance equations is modified for quasi-three-level passively Q-switched lasers with a slow saturable absorber. Optimal parameters of a Yb3+:YAG microchip laser with a passive Cr4+:YAG Q switch are calculated at a pulse repetition rate of ~100 kHz. The single-mode operation of the Yb:YAG — Cr:YAG laser with a pulse repetition rate above 100 kHz, the average output power 0.45 W and peak power 1.5 kW is experimentally demonstrated. In the multimode lasing regime, pulses with a peak power of 4.2 kW are obtained at an average output power of 0.8 W and a pulse repetition rate of 10 kHz.
Received: 12.05.2009
English version:
Quantum Electronics, 2009, Volume 39, Issue 11, Pages 1018–1022
DOI: https://doi.org/10.1070/QE2009v039n11ABEH014151
Bibliographic databases:
Document Type: Article
PACS: 42.55.Rz, 42.55.Sa, 42.55.Xi, 42.60.Da, 42.60.Gd
Language: Russian


Citation: V. È. Kisel', A. S. Yasukevich, N. V. Kondratyuk, N. V. Kuleshov, “Diode-pumped passively ]Q-switched high-repetition-rate Yb microchip laser”, Kvantovaya Elektronika, 39:11 (2009), 1018–1022 [Quantum Electron., 39:11 (2009), 1018–1022]
Linking options:
  • https://www.mathnet.ru/eng/qe14151
  • https://www.mathnet.ru/eng/qe/v39/i11/p1018
  • This publication is cited in the following 12 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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