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This article is cited in 1 scientific paper (total in 1 paper)
Nanostructures
Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system
Yu. K. Verevkina, V. N. Petryakova, Yu. Yu. Gushchinab, C. S. Pengc, C. Tanc, M. Pessac, Z. Wangd, S. M. Olaizolae, S. Tisserandf a Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
b Research and Education Center for Physics of Solid State Nanostructures, Nizhnii Novgorod State University
c Optoelectronics Research Center, Tampere University of Technology, Finland
d Manufacturing Engineering Centre, Cardiff University, UK
e CEIT and Tecnun (University of Navarra), Spain
f SILIOS Technologies
Abstract:
Four-beam laser interference is shown to stimulate the self-organisation of periodic two-dimensional arrays of nanoislands on the surface of GaAs/InGaAs/GaAs epitaxial structures. (Self-organisation is here taken to mean processes that determine the island size.) The island size distribution has two well-defined maxima. The smaller islands (~5 nm) form inside each heat-affected zone, and the larger islands (~15 nm), at the periphery of such zones. The island width is a factor of 20 — 60 smaller than the standing wave period, which can be accounted for in terms of the elastic stress on the surface of the epitaxial film.
Received: 06.04.2009 Revised: 03.08.2009
Citation:
Yu. K. Verevkin, V. N. Petryakov, Yu. Yu. Gushchina, C. S. Peng, C. Tan, M. Pessa, Z. Wang, S. M. Olaizola, S. Tisserand, “Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system”, Kvantovaya Elektronika, 40:1 (2010), 73–76 [Quantum Electron., 40:1 (2010), 73–76]
Linking options:
https://www.mathnet.ru/eng/qe14131 https://www.mathnet.ru/eng/qe/v40/i1/p73
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