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Kvantovaya Elektronika, 2010, Volume 40, Number 5, Pages 441–445 (Mi qe13957)  

Fiber optics

Role of point defects in the photosensitivity of hydrogen-loaded phosphosilicate glass

Yu. V. Larionov

Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
References:
Abstract: It is shown that point defect modifications in hydrogen-loaded phosphosilicate glass (PSG) do not play a central role in determining its photosensitivity. Photochemical reactions that involve a two-step point defect modification and pre-exposure effect are incapable of accounting for photoinduced refractive index changes. It seems likely that a key role in UV-induced refractive index modifications is played by structural changes in the PSG network. Experimental data are presented that demonstrate intricate network rearrangement dynamics during UV exposure of PSG.
Received: 12.08.2009
Revised: 22.12.2009
English version:
Quantum Electronics, 2010, Volume 40, Issue 5, Pages 441–445
DOI: https://doi.org/10.1070/QE2010v040n05ABEH013957
Bibliographic databases:
Document Type: Article
PACS: 42.81.-i, 42.71.Nq, 42.79.Dj
Language: Russian


Citation: Yu. V. Larionov, “Role of point defects in the photosensitivity of hydrogen-loaded phosphosilicate glass”, Kvantovaya Elektronika, 40:5 (2010), 441–445 [Quantum Electron., 40:5 (2010), 441–445]
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