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Kvantovaya Elektronika, 2009, Volume 39, Number 2, Pages 163–170 (Mi qe13926)  

Nonlinear optical phenomena

Influence of phase memory effects in collisions on a resonance Raman spectrum

A. I. Parkhomenko, A.M. Shalagin

Institute of Automation and Electrometry, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract: The influence of phase memory effects on the spectrum of resonance Raman scattering by three-level atoms with the Λ configuration of levels experiencing collisions with buffer gas atoms in a strong monochromatic radiation field is studied theoretically. Systems with a small Doppler broadening compared to the collision frequency (large buffer gas pressures) are analysed in the general case of an arbitrary change (from complete change to complete preservation) in the phase memory at any of three transitions in the Λ system. It is shown that in the absence of the collision relaxation of the low-frequency coherence at the transitions between two lower levels of the Λ system, the radiation scattering spectrum has a spectrally narrow component at the Raman frequency, which, despite the homogeneous broadening of the absorption line, exhibits a strongly pronounced anisotropy. In the direction, close to the propagation direction of exciting radiation, this line maximally narrows down. It is significant that upon optical pumping to the level unaffected by a strong field the resonance Raman spectrum noticeably differs from the spectrum in the case of the probe field. A simple expression is proposed for calculating the degree of the phase memory preservation in collisions from the relative amplitude of the Raman resonance.
Received: 10.06.2008
English version:
Quantum Electronics, 2009, Volume 39, Issue 2, Pages 163–170
DOI: https://doi.org/10.1070/QE2009v039n02ABEH013926
Bibliographic databases:
Document Type: Article
PACS: 42.65.Dr, 42.50.Md
Language: Russian


Citation: A. I. Parkhomenko, A.M. Shalagin, “Influence of phase memory effects in collisions on a resonance Raman spectrum”, Kvantovaya Elektronika, 39:2 (2009), 163–170 [Quantum Electron., 39:2 (2009), 163–170]
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