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Kvantovaya Elektronika, 2009, Volume 39, Number 2, Pages 135–138 (Mi qe13910)  

This article is cited in 2 scientific papers (total in 2 papers)

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Population and relaxation kinetics of the 5d[3/2]1 level upon pulsed electron-beam excitation of pure xenon

I. A. Denezhkin, P. P. D'yachenko

Institute for physics and power engineering named after A. I. Leypunsky, Obninsk, Kaluga Region
Full-text PDF (137 kB) Citations (2)
Abstract: The time dependences of the spontaneous emission intensity at the 5d[3/2]1 → 6p[3/2]1 and 5d[3/2]1 → 6p[5/2]2 transitions at 2.03 and 1.73 μm, respectively, are studied in the pressure range from 0.1 to 100 Torr upon excitation by a nanosecond electron beam. It is shown that the population and relaxation of the 5d[3/2]1 level under these conditions is determined by its excitation and quenching by electrons of a recombining plasma. No plasma-chemical processes populating this level, in particular, a channel of formation of a molecular Xe2+ ion was found. The lifetime of the 5d[3/2]1 state of Xe atoms in the pressure range from 0.5 to 5 Torr is about 1 ns.
Received: 02.06.2008
Revised: 10.09.2008
English version:
Quantum Electronics, 2009, Volume 39, Issue 2, Pages 135–138
DOI: https://doi.org/10.1070/QE2009v039n02ABEH013910
Bibliographic databases:
Document Type: Article
PACS: 32.50.+d, 41.75.Fr
Language: Russian


Citation: I. A. Denezhkin, P. P. D'yachenko, “Population and relaxation kinetics of the 5d[3/2]1 level upon pulsed electron-beam excitation of pure xenon”, Kvantovaya Elektronika, 39:2 (2009), 135–138 [Quantum Electron., 39:2 (2009), 135–138]
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  • https://www.mathnet.ru/eng/qe13910
  • https://www.mathnet.ru/eng/qe/v39/i2/p135
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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