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This article is cited in 2 scientific papers (total in 2 papers)
Control of laser radiation parameters
Stimulated-emission wavelength switching in optically pumped InGaAs/AlGaInAs laser heterostructures
A. A. Andronova, Yu. N. Nozdrina, A. V. Okomel'kova, A. N. Yablonskiia, A. A. Marmalyukb, Yu. L. Ryaboshtanb a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b "Sigm Plyus" Ltd., Moscow
Abstract:
We report stimulated near-IR emission in optically pumped InGaAs/AlGaInAs heterostructures and stimulated-emission wavelength switching from 1.9 to 1.5 and then to 1.2 μm with increasing optical pump intensity. The wavelength switching behaviour of the heterostructures depends on their geometry (band-gap profile) and the competition between stimulated emissions at different frequencies in different parts of the system.
Received: 29.04.2008 Revised: 10.11.2008
Citation:
A. A. Andronov, Yu. N. Nozdrin, A. V. Okomel'kov, A. N. Yablonskii, A. A. Marmalyuk, Yu. L. Ryaboshtan, “Stimulated-emission wavelength switching in optically pumped InGaAs/AlGaInAs laser heterostructures”, Kvantovaya Elektronika, 39:3 (2009), 247–250 [Quantum Electron., 39:3 (2009), 247–250]
Linking options:
https://www.mathnet.ru/eng/qe13903 https://www.mathnet.ru/eng/qe/v39/i3/p247
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