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This article is cited in 4 scientific papers (total in 4 papers)
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Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers
E. N. Donskoia, E. V. Zhdanovab, A. N. Zalyalova, M. M. Zverevb, S. V. Ivanovc, D. V. Peregoudovb, O. N. Petrushina, Yu. A. Savel'eva, I. V. Sedovac, S. V. Sorokinc, M. D. Tarasova, Yu. S. Shigaeva a Federal State Unitary Enterprise «Russian Federal Nuclear Center — All-Russian Research Institute of Experimental Physics», Sarov, Nizhny Novgorod region
b Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)
c Ioffe Institute, St. Petersburg
Abstract:
The spatial density distribution of the absorbed energy in ZnSe semiconductor lasers excited by electrons with energies from 2 keV to 1 MeV is calculated by the Monte-Carlo method. Approximate analytic expressions determining the absorbed energy of electrons in ZnSe are presented. The pump power threshold in a semiconductor quantum-well ZnSe structure is experimentally determined. The lasing threshold in such structures is estimated as a function of the electron energy.
Received: 05.03.2008 Revised: 12.08.2008
Citation:
E. N. Donskoi, E. V. Zhdanova, A. N. Zalyalov, M. M. Zverev, S. V. Ivanov, D. V. Peregoudov, O. N. Petrushin, Yu. A. Savel'ev, I. V. Sedova, S. V. Sorokin, M. D. Tarasov, Yu. S. Shigaev, “Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers”, Kvantovaya Elektronika, 38:12 (2008), 1097–1100 [Quantum Electron., 38:12 (2008), 1097–1100]
Linking options:
https://www.mathnet.ru/eng/qe13848 https://www.mathnet.ru/eng/qe/v38/i12/p1097
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