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Kvantovaya Elektronika, 2008, Volume 38, Number 7, Pages 661–664 (Mi qe13824)  

This article is cited in 5 scientific papers (total in 5 papers)

Active media, lasers, and amplifiers

Semiconductor optical amplifiers for the 1000—1100-nm spectral range

A. A. Lobintsova, M. V. Shramenkoa, S. D. Yakubovichb

a Superlum Diodes Ltd., Moscow
b Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)
Full-text PDF (114 kB) Citations (5)
Abstract: Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively.
Received: 14.02.2008
English version:
Quantum Electronics, 2008, Volume 38, Issue 7, Pages 661–664
DOI: https://doi.org/10.1070/QE2008v038n07ABEH013824
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Lh
Language: Russian


Citation: A. A. Lobintsov, M. V. Shramenko, S. D. Yakubovich, “Semiconductor optical amplifiers for the 1000—1100-nm spectral range”, Kvantovaya Elektronika, 38:7 (2008), 661–664 [Quantum Electron., 38:7 (2008), 661–664]
Linking options:
  • https://www.mathnet.ru/eng/qe13824
  • https://www.mathnet.ru/eng/qe/v38/i7/p661
  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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