Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 2009, Volume 39, Number 1, Pages 36–42 (Mi qe13820)  

Control of laser radiation parameters

Instability of stationary lasing and self-starting mode locking in external-cavity semiconductor lasers

I. V. Smetanin, P. P. Vasil'ev

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Abstract: Parameters of external-cavity semiconductor lasers, when the stationary lasing becomes unstable, were analysed within the framework of a theoretical model of self-starting mode locking. In this case, a train of ultrashort pulses can be generated due to intrinsic nonlinearities of the laser medium. A decisive role of the transverse optical field nonuniformity, pump rate, and gain spectral bandwidth in the development of the instability of stationary lasing was demonstrated.
Received: 13.02.2008
Revised: 26.05.2008
English version:
Quantum Electronics, 2009, Volume 39, Issue 1, Pages 36–42
DOI: https://doi.org/10.1070/QE2009v039n01ABEH013820
Bibliographic databases:
Document Type: Article
PACS: 42.60.DA, 42.60.Fc, 42.55.Px
Language: Russian


Citation: I. V. Smetanin, P. P. Vasil'ev, “Instability of stationary lasing and self-starting mode locking in external-cavity semiconductor lasers”, Kvantovaya Elektronika, 39:1 (2009), 36–42 [Quantum Electron., 39:1 (2009), 36–42]
Linking options:
  • https://www.mathnet.ru/eng/qe13820
  • https://www.mathnet.ru/eng/qe/v39/i1/p36
  • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
    Statistics & downloads:
    Abstract page:145
    Full-text PDF :65
    First page:1
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024