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Kvantovaya Elektronika, 2008, Volume 38, Number 8, Pages 744–746 (Mi qe13772)  

This article is cited in 1 scientific paper (total in 1 paper)

Lasers, active media

Broadband near-IR double quantum-well heterostructure superluminescent diodes

E. V. Andreevaa, N. A. Volkova, Yu. O. Kostina, P. I. Lapina, A. A. Marmalyukb, D. R. Sabitovb, S. D. Yakubovichc

a Superlum Diodes Ltd., Moscow
b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
c Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)
Full-text PDF (111 kB) Citations (1)
Abstract: Superluminescent diodes (SLDs) based on double quantum-well (AlGa)As/GaAs heterostructures emitting between 800 and 900 nm are studied experimentally. These SLDs provide a high enough output power in the emission bandwidth more than 55 nm at much shorter active channel lengths than SLDs based on similar single quantum-well heterostructures. Despite the high injection current density, the service life of the SLDs exceeds 10000 hours.
Received: 03.12.2007
English version:
Quantum Electronics, 2008, Volume 38, Issue 8, Pages 744–746
DOI: https://doi.org/10.1070/QE2008v038n08ABEH013772
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 85.60.Jb, 42.60.Lh
Language: Russian


Citation: E. V. Andreeva, N. A. Volkov, Yu. O. Kostin, P. I. Lapin, A. A. Marmalyuk, D. R. Sabitov, S. D. Yakubovich, “Broadband near-IR double quantum-well heterostructure superluminescent diodes”, Kvantovaya Elektronika, 38:8 (2008), 744–746 [Quantum Electron., 38:8 (2008), 744–746]
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  • https://www.mathnet.ru/eng/qe/v38/i8/p744
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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