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Kvantovaya Elektronika, 2008, Volume 38, Number 10, Pages 945–950 (Mi qe13769)  

This article is cited in 2 scientific papers (total in 2 papers)

Interaction of laser radiation with matter

Rearrangement of a phosphosilicate glass network induced by the 193-nm radiation

Yu. V. Larionova, V. O. Sokolovb, V. G. Plotnichenkob

a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
b Fiber Optics Research Center of the Russian Academy of Sciences, Moscow
Full-text PDF (151 kB) Citations (2)
Abstract: The IR absorption and Raman spectra of phosphosilicate glass (PSG) are measured during its exposure to radiation at a wavelength of 193 nm. The obtained data demonstrate the complicated rearrangement dynamics of the glass network around phosphor atoms and of the glass network as a whole. The experimental dependences are explained by the model of the PSG network based on the concepts of the theory of rigidity percolation.
Received: 27.11.2007
Revised: 19.03.2008
English version:
Quantum Electronics, 2008, Volume 38, Issue 10, Pages 945–950
DOI: https://doi.org/10.1070/QE2008v038n10ABEH013769
Bibliographic databases:
Document Type: Article
PACS: 42.70.Ce, 42.70.Nq, 42.81.-i
Language: Russian


Citation: Yu. V. Larionov, V. O. Sokolov, V. G. Plotnichenko, “Rearrangement of a phosphosilicate glass network induced by the 193-nm radiation”, Kvantovaya Elektronika, 38:10 (2008), 945–950 [Quantum Electron., 38:10 (2008), 945–950]
Linking options:
  • https://www.mathnet.ru/eng/qe13769
  • https://www.mathnet.ru/eng/qe/v38/i10/p945
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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