Ignition and propagation of a solitary wave of the formation of point defects as a result of intense laser generation of electron — hole pairs in semiconductors and dielectrics

A model of a solitary defect-generation wave is developed by analogy with the combustion wave model. This solitary wave is initiated and propagates in semiconductors and dielectrics as a result of intense laser generation of electron — hole pairs. The following characteristics of a defect-generation wave are determined analytically: the critical intensity of ignition of the wave; the profile and propagation velocity of the wave; the concentration of point defects generated by the wave. The results obtained are used to provide a quantitative interpretation of an experimental study of the damage to the surface of Si by repeated picosecond pulses.