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Kvantovaya Elektronika, 2007, Volume 37, Number 8, Pages 745–752 (Mi qe13648)  

This article is cited in 8 scientific papers (total in 8 papers)

Active media. Lasers

Output power of a ridge semiconductor laser in the single-frequency regime

D. V. Batrak, A. P. Bogatov

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Full-text PDF (180 kB) Citations (8)
Abstract: It is shown that the single-frequency output power of a semiconductor laser with a built-in horizontal waveguide and typical parameters is restricted from above. This restriction is caused by a change in the effective gain for longitudinal modes adjacent to the laser mode due to a nonlinear process producing oscillations of the carrier concentration at the intermode frequencies. If the laser resonator contains random or deliberately introduced inhomogeneities, the maximum achievable single-frequency output power can considerably (more than by an order of magnitude) exceed the output power in the absence of inhomogeneities.
Received: 31.05.2007
English version:
Quantum Electronics, 2007, Volume 37, Issue 8, Pages 745–752
DOI: https://doi.org/10.1070/QE2007v037n08ABEH013648
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Jf
Language: Russian


Citation: D. V. Batrak, A. P. Bogatov, “Output power of a ridge semiconductor laser in the single-frequency regime”, Kvantovaya Elektronika, 37:8 (2007), 745–752 [Quantum Electron., 37:8 (2007), 745–752]
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  • https://www.mathnet.ru/eng/qe13648
  • https://www.mathnet.ru/eng/qe/v37/i8/p745
  • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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