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Kvantovaya Elektronika, 2007, Volume 37, Number 10, Pages 971–973 (Mi qe13627)  

This article is cited in 4 scientific papers (total in 4 papers)

Special issue devoted to the 25 anniversary of the A.M. Prokhorov General Physics Institute

Efficiency of population of the 4I13/2 level of the Er3+ ion and the possibility of lasing at 1.5 μm in Yb, Er:YAG at high temperatures

B. I. Galagan, B. I. Denker, V. V. Osiko, S. E. Sverchkov

Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
Full-text PDF (122 kB) Citations (4)
Abstract: It is shown that, as the temperature of an Yb, Er:YAG crystal is increased from room temperature to 400–600°C, the efficiency of energy accumulation on the 4I13/2 level of the Er3+ ion increases by several times upon optical pumping through Yb3+ ions. Under these conditions, up to 60% of erbium ions can be excited, which gives promise that lasing at a wavelength of 1.54 μm can be achieved in the Yb, Er:YAG crystal in the three-level scheme.
Received: 15.05.2007
English version:
Quantum Electronics, 2007, Volume 37, Issue 10, Pages 971–973
DOI: https://doi.org/10.1070/QE2007v037n10ABEH013627
Bibliographic databases:
Document Type: Article
PACS: 42.55.Rz, 32.80.-t
Language: Russian


Citation: B. I. Galagan, B. I. Denker, V. V. Osiko, S. E. Sverchkov, “Efficiency of population of the 4I13/2 level of the Er3+ ion and the possibility of lasing at 1.5 μm in Yb, Er:YAG at high temperatures”, Kvantovaya Elektronika, 37:10 (2007), 971–973 [Quantum Electron., 37:10 (2007), 971–973]
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  • https://www.mathnet.ru/eng/qe13627
  • https://www.mathnet.ru/eng/qe/v37/i10/p971
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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