A ZnSe/ZnMgSSe nanostructure for a laser electron-beam tube emitting in the blue spectral region

The ZnMgSSe epitaxial layers and quantum-well ZnSe/ZnMgSSe nanostructures are grown by the methods of molecular-beam epitaxy and metal-organic vapour-phase epitaxy (MOVPE) on GaAs substrates. The dependences of their structural and luminescent properties on the content of Mg and S are studied. The decomposition of a solid ZnMgSSe solution into structural phases is found in samples with the energy gap larger than 2.9 eV at T = 300 K. The decomposition complicates the development of efficient lasers. It is shown that a high homogeneity of the crystal lattice of barrier ZnMgSSe layers can be obtained in periodic ZnSe/ZnMgSSe nanostructures grown by the MOVPE method at T≈430 °C. Based on these structures, a laser is fabricated which emits 1.5 W at 458 nm upon longitudinal pumping by 42-keV electrons at room temperature.