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Kvantovaya Elektronika, 2006, Volume 36, Number 10, Pages 918–924 (Mi qe13278)  

This article is cited in 12 scientific papers (total in 12 papers)

Lasers

Simulations of light–current and spectral characteristics of InGaAlAs/InP semiconductor lasers

A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, Yu. L. Ryaboshtan, R. V. Chernov

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Abstract: The light—current and spectral characteristics of semiconductor lasers are simulated by using models with and without inverse mass for radiative transitions with and without fulfilment of the wave-vector selection rules. The best agreement between the theory and experiment is obtained for a model without inverse mass with radiative transitions without fulfilment of the selection rules. The obtained results are discussed.
Received: 28.03.2006
Revised: 24.05.2006
English version:
Quantum Electronics, 2006, Volume 36, Issue 10, Pages 918–924
DOI: https://doi.org/10.1070/QE2006v036n10ABEH013278
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Lh
Language: Russian


Citation: A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, Yu. L. Ryaboshtan, R. V. Chernov, “Simulations of light–current and spectral characteristics of InGaAlAs/InP semiconductor lasers”, Kvantovaya Elektronika, 36:10 (2006), 918–924 [Quantum Electron., 36:10 (2006), 918–924]
Linking options:
  • https://www.mathnet.ru/eng/qe13278
  • https://www.mathnet.ru/eng/qe/v36/i10/p918
  • This publication is cited in the following 12 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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