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This article is cited in 12 scientific papers (total in 12 papers)
Lasers
Simulations of light–current and spectral characteristics of InGaAlAs/InP semiconductor lasers
A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, Yu. L. Ryaboshtan, R. V. Chernov Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Abstract:
The light—current and spectral characteristics of semiconductor lasers are simulated by using models with and without inverse mass for radiative transitions with and without fulfilment of the wave-vector selection rules. The best agreement between the theory and experiment is obtained for a model without inverse mass with radiative transitions without fulfilment of the selection rules. The obtained results are discussed.
Received: 28.03.2006 Revised: 24.05.2006
Citation:
A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, Yu. L. Ryaboshtan, R. V. Chernov, “Simulations of light–current and spectral characteristics of InGaAlAs/InP semiconductor lasers”, Kvantovaya Elektronika, 36:10 (2006), 918–924 [Quantum Electron., 36:10 (2006), 918–924]
Linking options:
https://www.mathnet.ru/eng/qe13278 https://www.mathnet.ru/eng/qe/v36/i10/p918
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