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This article is cited in 3 scientific papers (total in 3 papers)
Lasers
Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser
P. P. Vasil'eva, H. Kanb, H. Ohtab, T. Hirumab, K. Tanakab a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Central Research Laboratory, Hamamatsu Photonics K.K., Japan
Abstract:
A theoretical model of the optical gain in asymmetric GaAs/AlGaAs quantum-well lasers is developed. It is demonstrated that the emission spectrum of asymmetric GaAs/AlGaAs quantum-well lasers is much broader than that of standard quantum-well lasers. The experimental samples of such lasers and superluminescent diodes with the emission bandwidth exceeding 50 nm are fabricated. Wavelength tunable ultrashort pulses with duration of 1–2 ps at repetition rates of 0.4–1 GHz are obtained by active mode locking of an external cavity laser.
Received: 15.05.2006 Revised: 08.08.2006
Citation:
P. P. Vasil'ev, H. Kan, H. Ohta, T. Hiruma, K. Tanaka, “Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser”, Kvantovaya Elektronika, 36:11 (2006), 1065–1071 [Quantum Electron., 36:11 (2006), 1065–1071]
Linking options:
https://www.mathnet.ru/eng/qe13221 https://www.mathnet.ru/eng/qe/v36/i11/p1065
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Abstract page: | 155 | Full-text PDF : | 133 | First page: | 1 |
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