P. P. Vasil'ev, H. Kan, H. Ohta, T. Hiruma, K. Tanaka, “Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser”, Kvantovaya Elektronika, 36:11 (2006), 1065–1071 [Quantum Electron., 36:11 (2006), 1065

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Kvantovaya Elektronika, 2006, Volume 36, Number 11, Pages 1065–1071 (Mi qe13221)

This article is cited in 3 scientific papers (total in 3 papers)

Lasers

Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser

P. P. Vasil'ev^a, H. Kan^b, H. Ohta^b, T. Hiruma^b, K. Tanaka^b

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Central Research Laboratory, Hamamatsu Photonics K.K., Japan

Full-text PDF (159 kB) Citations (3)

Abstract: A theoretical model of the optical gain in asymmetric GaAs/AlGaAs quantum-well lasers is developed. It is demonstrated that the emission spectrum of asymmetric GaAs/AlGaAs quantum-well lasers is much broader than that of standard quantum-well lasers. The experimental samples of such lasers and superluminescent diodes with the emission bandwidth exceeding 50 nm are fabricated. Wavelength tunable ultrashort pulses with duration of 1–2 ps at repetition rates of 0.4–1 GHz are obtained by active mode locking of an external cavity laser.

Received: 15.05.2006
Revised: 08.08.2006

English version:
Quantum Electronics, 2006, Volume 36, Issue 11, Pages 1065–1071
DOI: https://doi.org/10.1070/QE2006v036n11ABEH013221

Bibliographic databases:

Document Type: Article

PACS: 42.60.Fc, 42.55.Px

Language: Russian

Citation: P. P. Vasil'ev, H. Kan, H. Ohta, T. Hiruma, K. Tanaka, “Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser”, Kvantovaya Elektronika, 36:11 (2006), 1065–1071 [Quantum Electron., 36:11 (2006), 1065–1071]

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https://www.mathnet.ru/eng/qe13221

https://www.mathnet.ru/eng/qe/v36/i11/p1065

This publication is cited in the following 3 articles:

Citing articles in Google Scholar: Russian citations, English citations
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