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Kvantovaya Elektronika, 2006, Volume 36, Number 7, Pages 620–623 (Mi qe13175)  

This article is cited in 2 scientific papers (total in 2 papers)

SPECIAL ISSUE DEVOTED TO THE 90TH ANNIVERSARY OF A.M. PROKHOROV

Preparation and study of epitaxial Cr4+ : GGG films for passive Q switches in neodymium lasers

G. A. Bufetova, M. Yu. Gusev, I. A. Ivanov, D.A.Nikolaev, V. F. Seregin, V. B. Tsvetkov, I. A. Shcherbakov

Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
Full-text PDF (158 kB) Citations (2)
Abstract: The efficient technology is developed for growing Cr- and Ca-doped gadolinium–gallium garnet single-crystal films of thickness up to 100 μm on large substrates (76 mm) by the method of liquid-phase epitaxy from a solution–melt. The dependences of the absorption spectra of films and optical losses at 1 μm on the growth conditions and the solution–melt composition are studied. It is shown that Cr4+ ions are formed in the films, and these films can be used as passive Q switches in lasers.
Received: 03.04.2006
English version:
Quantum Electronics, 2006, Volume 36, Issue 7, Pages 620–623
DOI: https://doi.org/10.1070/QE2006v036n07ABEH013175
Bibliographic databases:
Document Type: Article
PACS: 42.70.Gi, 42.60.Gd, 42.55.Rz
Language: Russian


Citation: G. A. Bufetova, M. Yu. Gusev, I. A. Ivanov, D.A.Nikolaev, V. F. Seregin, V. B. Tsvetkov, I. A. Shcherbakov, “Preparation and study of epitaxial Cr4+ : GGG films for passive Q switches in neodymium lasers”, Kvantovaya Elektronika, 36:7 (2006), 620–623 [Quantum Electron., 36:7 (2006), 620–623]
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  • https://www.mathnet.ru/eng/qe/v36/i7/p620
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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