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This article is cited in 2 scientific papers (total in 2 papers)
SPECIAL ISSUE DEVOTED TO THE 90TH ANNIVERSARY OF A.M. PROKHOROV
Preparation and study of epitaxial Cr4+ : GGG films for passive Q switches in neodymium lasers
G. A. Bufetova, M. Yu. Gusev, I. A. Ivanov, D.A.Nikolaev, V. F. Seregin, V. B. Tsvetkov, I. A. Shcherbakov Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
Abstract:
The efficient technology is developed for growing Cr- and Ca-doped gadolinium–gallium garnet single-crystal films of thickness up to 100 μm on large substrates (76 mm) by the method of liquid-phase epitaxy from a solution–melt. The dependences of the absorption spectra of films and optical losses at 1 μm on the growth conditions and the solution–melt composition are studied. It is shown that Cr4+ ions are formed in the films, and these films can be used as passive Q switches in lasers.
Received: 03.04.2006
Citation:
G. A. Bufetova, M. Yu. Gusev, I. A. Ivanov, D.A.Nikolaev, V. F. Seregin, V. B. Tsvetkov, I. A. Shcherbakov, “Preparation and study of epitaxial Cr4+ : GGG films for passive Q switches in neodymium lasers”, Kvantovaya Elektronika, 36:7 (2006), 620–623 [Quantum Electron., 36:7 (2006), 620–623]
Linking options:
https://www.mathnet.ru/eng/qe13175 https://www.mathnet.ru/eng/qe/v36/i7/p620
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