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This article is cited in 11 scientific papers (total in 11 papers)
Lasers and amplifiers
Luminescent and lasing characteristics of heavily doped Yb3+:KY(WO4)2 crystals
V. È. Kisel'a, A. E. Troshina, V. G. Shcherbitskiia, N. V. Kuleshova, A. A. Pavlyukb, F. Brunnerc, R. Paschottac, F. Morier-Genoudc, U. Kellerc a International Laser Center, Belarus State Technical University, Minsk
b Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
c ETH Zurich, Physics Department, Institute of Quantum Electronics, Switzerland
Abstract:
The luminescence decay times are measured taking into account reabsorption for KY(WO4)2:Yb(KYW:Yb) crystals with atomic concentrations of active ions from 0.2% to 30%. The radiative lifetime of Yb3+ ions was measured to be 233 μs. The cw output power of 1.46 and 1.62 W was achieved with the slope efficiency 52% and 47% for Yb:KYW lasers with the atomic concentration of Yb3+ ions equal to 10% and 30%, respectively. Using a semiconductor mirror with a saturable absorber (SESAM) in the passive mode-locking regime, pulses of duration 194 and 180 fs were obtained at wavelengths of 1042 and 1039 nm for crystals with Yb3+ concentrations equal to 10% and 30%, respectively, the average output power being 0.63 and 0.75 W.
Received: 10.11.2005 Revised: 12.01.2006
Citation:
V. È. Kisel', A. E. Troshin, V. G. Shcherbitskii, N. V. Kuleshov, A. A. Pavlyuk, F. Brunner, R. Paschotta, F. Morier-Genoud, U. Keller, “Luminescent and lasing characteristics of heavily doped Yb3+:KY(WO4)2 crystals”, Kvantovaya Elektronika, 36:4 (2006), 319–323 [Quantum Electron., 36:4 (2006), 319–323]
Linking options:
https://www.mathnet.ru/eng/qe13143 https://www.mathnet.ru/eng/qe/v36/i4/p319
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