Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 1987, Volume 14, Number 1, Pages 210–213 (Mi qe12919)  

Brief Communications

Absorption of high-power infrared radiation as a result of weakly forbidden transitions in triatonic molecules

S. V. Ivanov, V. Ya. Panchenko
Abstract: Calculations are reported of the spectra of the average probability and the density of weakly forbidden vibrational–rotational transitions characterized by |ΔK|> 1 in the bands ν3 of O3 and ν1, of SO2. Model equidistant spectra are used to analyze the contribution of weakly forbidden transitions characterized by ΔK = ± 3 to the excitation of the ν1, vibrations of SO2. A determination is reported of the ranges of radiation intensities in which the absorption due to weakly forbidden transitions is maximal.
Received: 18.04.1986
English version:
Soviet Journal of Quantum Electronics, 1987, Volume 17, Issue 1, Pages 126–129
DOI: https://doi.org/10.1070/QE1987v017n01ABEH012919
Bibliographic databases:
Document Type: Article
UDC: 539.196:621.373.826:546.314
PACS: 33.20.Vq, 33.20.Ea, 33.15.Mt
Language: Russian


Citation: S. V. Ivanov, V. Ya. Panchenko, “Absorption of high-power infrared radiation as a result of weakly forbidden transitions in triatonic molecules”, Kvantovaya Elektronika, 14:1 (1987), 210–213 [Sov J Quantum Electron, 17:1 (1987), 126–129]
Linking options:
  • https://www.mathnet.ru/eng/qe12919
  • https://www.mathnet.ru/eng/qe/v14/i1/p210
  • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
    Statistics & downloads:
    Abstract page:145
    Full-text PDF :67
    First page:1
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024