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This article is cited in 1 scientific paper (total in 1 paper)
Letters to the editor
Optical characteristics of chalcogenide quantum-well structures grown by laser-induced vapor-phase epitaxy
M. S. Brodina, N. V. Bondar'a, A. V. Kovalenkob, A. Yu. Mekekechkob, V. V. Tishchenkoa a Institute of Physics, Academy of Sciences of Ukraine, Kiev
b Dnepropetrovsk State University
Abstract:
Laser-induced vapor-phase epitaxy can be used to synthesize quantum-well structures. Single ZnS – ZnSe – ZnS/GaAs(100) quantum-well structures and ZnS – ZnSe superlattices on GaAs(100) have been synthesized for the first time by this method. The reflection and photoluminescence spectra of these structures have been measured.
Received: 12.05.1993
Citation:
M. S. Brodin, N. V. Bondar', A. V. Kovalenko, A. Yu. Mekekechko, V. V. Tishchenko, “Optical characteristics of chalcogenide quantum-well structures grown by laser-induced vapor-phase epitaxy”, Kvantovaya Elektronika, 20:7 (1993), 629–630 [Quantum Electron., 23:7 (1993), 543–544]
Linking options:
https://www.mathnet.ru/eng/qe12915 https://www.mathnet.ru/eng/qe/v20/i7/p629
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