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Brief Communications
Continuously tunable electron-beam-pumped semiconductor laser
A. N. Vlasov, G. S. Kozina, T. A. Kostinskaya, L. N. Kurbatov, A. I. Uvarov
Abstract:
A sealed tunable laser was constructed using semiconductor solutions with a composition gradient along the surface and electron guns producing wedge-shaped beams. The pulse output of a GaAsP laser reached 100 W in the spectral range 0.65–0.81 μ. The rate of tuning of the emission wavelength could be up to 1 nm/nsec.
Received: 08.12.1976 Revised: 18.03.1977
Citation:
A. N. Vlasov, G. S. Kozina, T. A. Kostinskaya, L. N. Kurbatov, A. I. Uvarov, “Continuously tunable electron-beam-pumped semiconductor laser”, Kvantovaya Elektronika, 4:9 (1977), 2038–2039 [Sov J Quantum Electron, 7:9 (1977), 1168–1169]
Linking options:
https://www.mathnet.ru/eng/qe12832 https://www.mathnet.ru/eng/qe/v4/i9/p2038
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Statistics & downloads: |
Abstract page: | 126 | Full-text PDF : | 59 |
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