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This article is cited in 1 scientific paper (total in 1 paper)
Brief Communications
Integrated-optics functional elements based on epitaxial GaAlAs-GaAs heterostructures
Yu. A. Bykovskiĭ, Yu. P. Zakharov, A. V. Makovkin, V. K. Malyshev, V. I. Molochev, V. L. Smirnov, O. N. Talenskiĭ, A. V. Shmal'ko
Abstract:
An investigation was made of active integrated-optics devices based on epitaxial GaAlAs-GaAs heterostructures sharing a common GaAs substrate. The results demonstrated a possibility of multifunctional use of GaAlAs heterostructure elements. An integrated-optics optron was constructed and the main parameters and characteristics were determined for a unit operating under various conditions.
Received: 01.02.1977
Citation:
Yu. A. Bykovskiĭ, Yu. P. Zakharov, A. V. Makovkin, V. K. Malyshev, V. I. Molochev, V. L. Smirnov, O. N. Talenskiĭ, A. V. Shmal'ko, “Integrated-optics functional elements based on epitaxial GaAlAs-GaAs heterostructures”, Kvantovaya Elektronika, 4:9 (1977), 2007–2009 [Sov J Quantum Electron, 7:9 (1977), 1144–1145]
Linking options:
https://www.mathnet.ru/eng/qe12819 https://www.mathnet.ru/eng/qe/v4/i9/p2007
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