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Kvantovaya Elektronika, 1977, Volume 4, Number 8, Pages 1815–1816 (Mi qe12729)  

Brief Communications

Single-frequency GaAs injection laser

N. G. Basov, V. S. Kargapol'tsev, E. P. Malygin, V. K. Malyshev, V. I. Molochev, K. N. Narzullaev, V. V. Nikitin, A. S. Semenov, O. N. Talenskiĭ
Abstract: An experimental investigation was made of single-frequency GaAs injection lasers which were operated continuously at 77°K. The emission of a single longitudinal mode from a plane-parallel resonator was observed in a wide range of injection currents (up to a sevenfold excess over the threshold value) and the total output energy exceeded 50 mW.
Received: 25.02.1977
English version:
Soviet Journal of Quantum Electronics, 1977, Volume 7, Issue 8, Pages 1034
DOI: https://doi.org/10.1070/QE1977v007n08ABEH012729
Document Type: Article
UDC: 621.382.3
PACS: 42.55.Px
Language: Russian


Citation: N. G. Basov, V. S. Kargapol'tsev, E. P. Malygin, V. K. Malyshev, V. I. Molochev, K. N. Narzullaev, V. V. Nikitin, A. S. Semenov, O. N. Talenskiĭ, “Single-frequency GaAs injection laser”, Kvantovaya Elektronika, 4:8 (1977), 1815–1816 [Sov J Quantum Electron, 7:8 (1977), 1034]
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    Квантовая электроника Quantum Electronics
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