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This article is cited in 2 scientific papers (total in 2 papers)
Laser applications and other topics in quantum electronics
Application of Schottky diodes as frequency converters in submillimetre and IR systems
S. N. Bagayeva, V. G. Bozhkovb, V. F. Zakharyasha, V. M. Klementyeva, O. Yu. Malakhovskiib, V. S. Pivtsova, S. V. Chepurova, A. G. Khamoyana a Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk
b Scientific-Research Institute of Semiconductor Devices, Tomsk
Abstract:
An experimental investigation was made of Schottky-barrier diodes of two types (based on InP and GaAs), which were used for frequency conversion in the submillimetre, near-IR, and mid-IR ranges. At wavelengths λ = 0.8 — 10 μm the InP diodes proved to be more efficient frequency converters, whereas in the submillimetre range the GaAs diodes were more efficient. Beat signals with the difference frequency up to ~1.7 THz in the region of λ = 10 μm were obtained for the first time from the InP diodes. The GaAs diodes were more efficient as video detectors in the submillimetre and IR ranges. The Schottky diodes were used in an optical clock system.
Received: 27.02.1998
Citation:
S. N. Bagayev, V. G. Bozhkov, V. F. Zakharyash, V. M. Klementyev, O. Yu. Malakhovskii, V. S. Pivtsov, S. V. Chepurov, A. G. Khamoyan, “Application of Schottky diodes as frequency converters in submillimetre and IR systems”, Kvantovaya Elektronika, 25:6 (1998), 558–562 [Quantum Electron., 28:6 (1998), 542–546]
Linking options:
https://www.mathnet.ru/eng/qe1268 https://www.mathnet.ru/eng/qe/v25/i6/p558
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Abstract page: | 273 | Full-text PDF : | 267 | First page: | 2 |
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