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Kvantovaya Elektronika, 1988, Volume 15, Number 11, Pages 2318–2322 (Mi qe12644)  

Lasers and physical processes in them

Dependence of the current coefficient of frequency modulation of single-mode semiconductor lasers on the constant injection current and on the frequency of the modulating signal

S. A. Zhernovoĭ, A. G. Plyavenek, I. A. Rachkov, L. A. Rivlin, S. D. Yakubovich
Abstract: An analysis is made of typical dependences of the current coefficient of frequency modulation of single-frequency homojunction lasers on the modulation frequency fm and on the constant injection current. In the case of fast modulation characterized by fm > 1 MHz the different nature of these dependences is interpreted by assuming that the nonequilibrium electron temperature differs from the crystal lattice temperature.
Received: 27.07.1987
English version:
Soviet Journal of Quantum Electronics, 1988, Volume 18, Issue 11, Pages 1450–1452
DOI: https://doi.org/10.1070/QE1988v018n11ABEH012644
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Fc
Language: Russian


Citation: S. A. Zhernovoĭ, A. G. Plyavenek, I. A. Rachkov, L. A. Rivlin, S. D. Yakubovich, “Dependence of the current coefficient of frequency modulation of single-mode semiconductor lasers on the constant injection current and on the frequency of the modulating signal”, Kvantovaya Elektronika, 15:11 (1988), 2318–2322 [Sov J Quantum Electron, 18:11 (1988), 1450–1452]
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    Квантовая электроника Quantum Electronics
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