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International conference on semiconductor injection lasers SELCO-87
Thermally induced stresses in stripe GaAs/GaAlAs laser diodes
R. Rimpler, W. Both
Abstract:
Heating of the active region of stripe GaAlAs/GaAs double-heterostructure laser diodes by an injection current has a strong influence on the stresses in this region. An increase in the temperature of the region by 10 K can alter a shear stress by 5–10 MPa. In the case of lasers with a large thermal resistance the strong heating of the active region can induce mechanical stresses exceeding technological stresses (10 MPa) or even critical shear stresses for dislocation motion (20 MPa).
Citation:
R. Rimpler, W. Both, “Thermally induced stresses in stripe GaAs/GaAlAs laser diodes”, Kvantovaya Elektronika, 15:11 (1988), 2291–2294 [Sov J Quantum Electron, 18:11 (1988), 1432–1434]
Linking options:
https://www.mathnet.ru/eng/qe12638 https://www.mathnet.ru/eng/qe/v15/i11/p2291
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Statistics & downloads: |
Abstract page: | 175 | Full-text PDF : | 328 | First page: | 1 |
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