Ohmic resistance of metal contacts with GaInAsP/InP double heterostructures as a function of the composition of the capping layer

Characteristics of low-resistance Au–Cr–Au contacts with a quaternary solid solution, isoperiodic with GaInAsP, were determined as a function of the composition. These contacts were used in injection lasers emitting in the range of 1.3 μm. The smallest specific resistance (2 X 10^– 5 Ω · cm²) was obtained for a contact with a GaInAs layer characterized by a hole density of ~ 10¹⁹ cm^– 3.