A. Baerwolff, P. Ènders, A. Knauer, D. Linke, U. Zeimer, “Calculation of the yield of fault-free laser diodes from the characteristics of the (100)InP substrate material used in epitaxial double heterostructures”, Kvantovaya Elektronika, 15:11 (1988), 2273–2275 [Sov J Quantum Electron, 18:11 (1988), 1422

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Kvantovaya Elektronika, 1988, Volume 15, Number 11, Pages 2273–2275 (Mi qe12633)

International conference on semiconductor injection lasers SELCO-87

Calculation of the yield of fault-free laser diodes from the characteristics of the (100)InP substrate material used in epitaxial double heterostructures

A. Baerwolff, P. Ènders, A. Knauer, D. Linke, U. Zeimer

Full-text PDF (585 kB)

Abstract: It is shown that the yield of fault-free laser diodes is related to the density and distribution of dislocations in the substrate. A method is described for visualization of etch pits and of their relationship to defects in the substrate.

English version:
Soviet Journal of Quantum Electronics, 1988, Volume 18, Issue 11, Pages 1422–1424
DOI: https://doi.org/10.1070/QE1988v018n11ABEH012633

Bibliographic databases:

Document Type: Article

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 73.40.Kp, 61.72.Lk

Language: Russian

Citation: A. Baerwolff, P. Ènders, A. Knauer, D. Linke, U. Zeimer, “Calculation of the yield of fault-free laser diodes from the characteristics of the (100)InP substrate material used in epitaxial double heterostructures”, Kvantovaya Elektronika, 15:11 (1988), 2273–2275 [Sov J Quantum Electron, 18:11 (1988), 1422–1424]

Linking options:

https://www.mathnet.ru/eng/qe12633

https://www.mathnet.ru/eng/qe/v15/i11/p2273

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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Abstract page:	179
Full-text PDF :	85
First page:	1

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