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This article is cited in 1 scientific paper (total in 1 paper)
International conference on semiconductor injection lasers SELCO-87
Two-stage liquid phase epitaxy for fabrication of buried InGaAsP/InP heterostructures
O. Procházková, J. Novotný, F. Šrobár
Abstract:
The technology of growth of buried heterojunction lasers emitting at 1.3 μm and some of their physical properties are described. Mesa stripes 8-μm wide were formed on heteroepitaxial wafers grown by liquid phase epitaxy at 630°C. They were buried by a second process at a lower temperature (590°C). The threshold current was about 100 mA and the temperature sensitivity was characterized by a parameter amounting to about 60 K. Single-mode lasing was observed occasionally.
Citation:
O. Procházková, J. Novotný, F. Šrobár, “Two-stage liquid phase epitaxy for fabrication of buried InGaAsP/InP heterostructures”, Kvantovaya Elektronika, 15:11 (1988), 2270–2272 [Sov J Quantum Electron, 18:11 (1988), 1420–1422]
Linking options:
https://www.mathnet.ru/eng/qe12632 https://www.mathnet.ru/eng/qe/v15/i11/p2270
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Abstract page: | 135 | Full-text PDF : | 58 | First page: | 1 |
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