|
International conference on semiconductor injection lasers SELCO-87
High-performance 1.3-μm InGaAsP/InP heterostructures formed by two-phase liquid epitaxy
J. Novotný, O. Procházková, F. Šrobár, J. Zelinka
Abstract:
A description is given of a two-phase liquid epitaxy method used to grow InGaAsP/InP heterostructures intended for injection lasers emitting in the 1.3-μm range. A study was made of heterostructures of three types: double, with an additional quaternary layer (λ ≈ 1.1 μm) adjoining the active layer; with two quaternary layers between the active layer and the InP confining layers. The configuration with two flanking quaternary layers was found to be the best from the point of view of the threshold current density, optical output power, and reproducibility.
Citation:
J. Novotný, O. Procházková, F. Šrobár, J. Zelinka, “High-performance 1.3-μm InGaAsP/InP heterostructures formed by two-phase liquid epitaxy”, Kvantovaya Elektronika, 15:11 (1988), 2262–2265 [Sov J Quantum Electron, 18:11 (1988), 1415–1417]
Linking options:
https://www.mathnet.ru/eng/qe12630 https://www.mathnet.ru/eng/qe/v15/i11/p2262
|
Statistics & downloads: |
Abstract page: | 115 | Full-text PDF : | 66 | First page: | 1 |
|