Spontaneous and stimulated emission from GaxIn1–xAs, GaAsxSb1–x, and GaxIn1–xAs1–yPy solid solutions

Epitaxial films of Ga_xIn_1–xAs, GaAs_xSb_1–x, and Ga_xIn_1–xAs_1–yP_y were excited with 50 keV electrons and the characteristics of photoluminescence and coherent radiation emitted from these films were determined at temperatures of 80 and 300°K. A study was made of the dependence of the luminescence intensity and laser parameters on the technology used in the preparation of these solid-solution films and on their composition and type of conduction. It was concluded that these materials could be used as efficient semiconductor lasers emitting up to 150 W power at wavelengths of 1–1.15 μ from an excited region of 0.5×0.5 mm size.