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Kvantovaya Elektronika, 1988, Volume 15, Number 10, Pages 2012–2015 (Mi qe12475)  

Solid-state and semiconductor lasers

High-frequency analog modulation of a semiconductor laser

N. N. Evtikhiev, A. V. Lukashin, G. T. Pak, V. V. Popovichev
Abstract: An investigation was made of high-frequency characteristics of GaAlAs injection lasers under continuous modulation conditions. The optical amplitude–frequency characteristics and the frequency dependence of the impedance made it possible to determine the equivalent circuits of two forms of lasers: a stripe laser and a laser with a channel in the substrate, which made it possible to optimize the input circuits of a laser light emitter. It was found that the channel-type laser had a highly linear modulation characteristic.
Received: 17.02.1988
English version:
Soviet Journal of Quantum Electronics, 1988, Volume 18, Issue 10, Pages 1261–1263
DOI: https://doi.org/10.1070/QE1988v018n10ABEH012475
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Fc, 42.60.Jf
Language: Russian


Citation: N. N. Evtikhiev, A. V. Lukashin, G. T. Pak, V. V. Popovichev, “High-frequency analog modulation of a semiconductor laser”, Kvantovaya Elektronika, 15:10 (1988), 2012–2015 [Sov J Quantum Electron, 18:10 (1988), 1261–1263]
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