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Kvantovaya Elektronika, 1988, Volume 15, Number 9, Pages 1848–1855 (Mi qe12441)  

Interaction of radiation with matter. Laser plasma

Development of optical breakdown on the surfaces of semiconductors subjected to two laser beams of different frequencies

Yu. V. Vigant, O. L. Kulikov, V. A. Lur'e, B. I. Makshantsev, A. M. Mamin, N. F. Pilipetskiĭ
Abstract: An experimental investigation was made of the characteristic features of optical breakdown on the surface of silicon and germanium subjected to laser pulses of wavelengths 1.06 and 10.6 μm with a short time delay between them. A theoretical analysis was made of the main experimental dependences. Reduction in the breakdown threshold at the wavelength of 10.6 μm was attributed to intraband absorption by free carriers, which appeared as a result of photoexcitation of a semiconductor with pulsed 1.06 μm radiation. A strong increase in the breakdown threshold occurred near a plasma resonance for the CO2 laser radiation.
Received: 20.05.1987
English version:
Soviet Journal of Quantum Electronics, 1988, Volume 18, Issue 9, Pages 1154–1158
DOI: https://doi.org/10.1070/QE1988v018n09ABEH012441
Bibliographic databases:
Document Type: Article
UDC: 621.373.826
PACS: 61.80.Ba, 61.82.Fk, 68.47.Fg
Language: Russian


Citation: Yu. V. Vigant, O. L. Kulikov, V. A. Lur'e, B. I. Makshantsev, A. M. Mamin, N. F. Pilipetskiĭ, “Development of optical breakdown on the surfaces of semiconductors subjected to two laser beams of different frequencies”, Kvantovaya Elektronika, 15:9 (1988), 1848–1855 [Sov J Quantum Electron, 18:9 (1988), 1154–1158]
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    Квантовая электроника Quantum Electronics
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