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Kvantovaya Elektronika, 1988, Volume 15, Number 9, Pages 1753–1755 (Mi qe12421)  

Lasers and laser amplifiers

Laser using I*Xe exciplexes

T. P. Zhurilo, V. Yu. Zalesskiĭ, A. M. Kokushkin, V. M. Kiselev
Abstract: Lasing was observed in iodine atoms perturbed by xenon at pressures up to 30 atm. A reduction in the delay of the laser pulse relative to the beginning of the pump pulse with increasing xenon pressure confirmed that there is a broad strong IXe(1/2)'→(1/2)'' exciplex transition and opened up the possibility of generating picosecond laser pulses at ~ 1.3 μm.
Received: 01.12.1987
English version:
Soviet Journal of Quantum Electronics, 1988, Volume 18, Issue 9, Pages 1090–1092
DOI: https://doi.org/10.1070/QE1988v018n09ABEH012421
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.823
PACS: 42.55.Lt, 32.80.Bx, 42.65.Re, 42.79.Bh, 32.80.Rm
Language: Russian


Citation: T. P. Zhurilo, V. Yu. Zalesskiĭ, A. M. Kokushkin, V. M. Kiselev, “Laser using I*Xe exciplexes”, Kvantovaya Elektronika, 15:9 (1988), 1753–1755 [Sov J Quantum Electron, 18:9 (1988), 1090–1092]
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