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Kvantovaya Elektronika, 1988, Volume 15, Number 8, Pages 1610–1614 (Mi qe12395)  

Laser plasma

Laser plasma formed by a gamma-irradiated target

M. R. Bedilov, Kh. B. Beisembaeva, S. A. Karamysheva, M. S. Sabitov
Abstract: An investigation was made of the interaction of neodymium laser radiation (λ = 1.06 μm) with a sample of γ-irradiated n-type crystalline silicon. The irradiation was performed in a flux of γ photons from 60Co with a power of 1.5 kR/s at doses of up to between 1 MR and 10 GR. The results of irradiation were studied using optical microscopy and laser time-of-flight mass spectroscopy. It was established experimentally that high-dose γ irradiation of silicon leads to an enlargement of the damage crater which appears under the action of q = 1–100-GW/cm2 laser radiation and to a lowering of the threshold for the formation of a plasma with an ionic charge multiplicity of z≥2. A joint analysis of the charge and energy parameters of plasmas formed from silicon before and after γ irradiation and of their ability to absorb λ = 1.06-μm radiation demonstrated that γ irradiation of the investigated target promotes the formation of a denser plasma with more highly charged ions for the same input energy.
Received: 24.04.1987
English version:
Soviet Journal of Quantum Electronics, 1988, Volume 18, Issue 8, Pages 1004–1007
DOI: https://doi.org/10.1070/QE1988v018n08ABEH012395
Bibliographic databases:
Document Type: Article
UDC: 621.373.826:533.9
PACS: 61.80.Ed, 61.82.Fk, 52.50.Jm
Language: Russian


Citation: M. R. Bedilov, Kh. B. Beisembaeva, S. A. Karamysheva, M. S. Sabitov, “Laser plasma formed by a gamma-irradiated target”, Kvantovaya Elektronika, 15:8 (1988), 1610–1614 [Sov J Quantum Electron, 18:8 (1988), 1004–1007]
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    Квантовая электроника Quantum Electronics
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