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Brief Communications
Generation of light in epitaxial cadmium sulfide films
A. Kh. Abduev, A. D. Adukov, B. M. Ataev, M. S. Buttaev
Abstract:
Lasing was observed in single-crystal (0001) CdS films grown on (0001) Al2O3 substrates and excited with N2 laser radiation. Lasing emission occurred at 492 and 497 nm and the thresholds were 0.3 and 0.75 MW/cm2, respectively. The half-width of the bands was ~1 nm and the divergence of the radiation was ~20°. It was assumed that the mechanisms responsible for lasing were the exciton-phonon interaction (492 nm) line and recombination in an electron-hole plasma (497 nm).
Received: 12.08.1981
Citation:
A. Kh. Abduev, A. D. Adukov, B. M. Ataev, M. S. Buttaev, “Generation of light in epitaxial cadmium sulfide films”, Kvantovaya Elektronika, 9:4 (1982), 830–832 [Sov J Quantum Electron, 12:4 (1982), 524–526]
Linking options:
https://www.mathnet.ru/eng/qe12358 https://www.mathnet.ru/eng/qe/v9/i4/p830
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Statistics & downloads: |
Abstract page: | 98 | Full-text PDF : | 48 | First page: | 1 |
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