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Kvantovaya Elektronika, 1988, Volume 15, Number 7, Pages 1462–1464 (Mi qe12327)  

This article is cited in 10 scientific papers (total in 10 papers)

Laser applications and other aspects of quantum electronics

Temperature dependence of the gain in Y3Al5O12:Cr3+:Tm3+:Ho3+

A. A. Nikitichev
Abstract: A study was made of the influence of the coactivator concentration on the temperature dependence of the gain due to the 5I75I8 transition in the Ho3+ ion (λl ≈ 2.09 μm) in Y3Al5O12:Cr3+:Tm3+:Ho3+ crystals. It was found that the temperature-activated process of loss of the inversion involved the summation of excitations of the upper active level and the 3F4 level of Tm3+. Direct measurements showed that a strong interaction occurred between the 3F4 (Tm) and 5I7 (Ho) states.
Received: 12.08.1987
English version:
Soviet Journal of Quantum Electronics, 1988, Volume 18, Issue 7, Pages 918–919
DOI: https://doi.org/10.1070/QE1988v018n07ABEH012327
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.2
PACS: 42.55.Rz, 42.60.Lh, 42.70.Hj
Language: Russian


Citation: A. A. Nikitichev, “Temperature dependence of the gain in Y3Al5O12:Cr3+:Tm3+:Ho3+”, Kvantovaya Elektronika, 15:7 (1988), 1462–1464 [Sov J Quantum Electron, 18:7 (1988), 918–919]
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  • https://www.mathnet.ru/eng/qe/v15/i7/p1462
  • This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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